Stress relaxation in uniquely oriented SiGe/Si epitaxial layers

M. E. Ware, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingChapter


This study explores stress relaxation of epitaxial SiGe layers grown on Si substrates with unique orientations. The crystallographic orientations of the Si substrates used were off-axis from the (001) plane towards the (111) plane by angles, θ = 0, 10, and 22 degrees. We have grown 100 nm thick Si (1-x)Ge (x) epitaxial layers with x = 0.3 on the Si substrates to examine the relaxation process. The as-deposited films are metastable to the formation of strain relaxing misfit dislocations, and thermal annealing is used to obtain highly relaxed films for comparison. Raman spectroscopy has been used to measure the strain relaxation, and atomic force microscopy has been used to explore the development of surface morphology. The Raman scattering indicated that the strain in the as-deposited films is dependent on the substrate orientation with strained layers grown on Si with 0 and 22 degree orientations while highly relaxed films were grown on the 10 degree substrate. The surface morphology also differed for the substrate orientations. The 10 degree surface is relatively smooth with hut shaped structures oriented at predicted angles relative to the step edges.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
PublisherMaterials Research Society
Number of pages6
StatePublished - 2000
Externally publishedYes
EventThin Films-Stress and Machanical Properties VIII - Boston, MA, USA
Duration: Nov 29 1999Dec 3 1999


OtherThin Films-Stress and Machanical Properties VIII
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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