Strained Si films grown by chemical vapor deposition of trisilane on Ge buffered Si(100)

Y. Y. Fang, V. R. D'Costa, J. Tolle, C. D. Poweleit, John Kouvetakis, Jose Menendez

Research output: Contribution to journalArticlepeer-review

8 Scopus citations


Relaxed Ge buffer layers were grown on Si substrates using a recently developed chemical vapor deposition (CVD) approach that combines digermylmethane and digermane precursors. Ultrathin Si films were deposited on these buffer layers at 420 °C by CVD using trisilane as a precursor. The Si films were studied with a variety of experimental techniques, with emphasis on Raman spectroscopy. The analysis of the Raman results shows that a thin (< 1 nm), fully strained Si-Ge alloy layer is formed at the Si-Ge interface. Pure Si grows on this transitional alloy with a strain that approximately follows the predictions from a simple equilibrium strain theory. These results are significant for Ge-based Metal-Oxide-Semiconductor applications that require a thin Si-layer to isolate the Ge channel from the high permittivity oxide.

Original languageEnglish (US)
Pages (from-to)8327-8332
Number of pages6
JournalThin Solid Films
Issue number23
StatePublished - Oct 1 2008


  • Chemical vapor deposition
  • Raman spectroscopy
  • Trisilane
  • strain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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