@inproceedings{96dc66cdab2a4568a92c4e59f3c3362d,
title = "Strain relaxation mechanisms in InGaN epilayers",
abstract = "We find that threading dislocations can play a key role in misfit strain relief in InGaN/GaN heterojunctions. Threading edge dislocations with Burgers vector b=1/3 〈 11{\=2}0 〉 change propagation directions in the strained InGaN layer. The inclination of edge dislocations is in a direction that creates vacancy planes, which accommodate part of the misfit strain. On the other hand, mixed-type dislocations with b=1/3 〈 11{\=2}3 〉 relieve part of the misfit strain by opening up as surface pits. The difference in the relaxation mechanism is attributed to the much different magnitude of the Burgers vector. For b=1/3 〈 11{\=2}3 〉, the dislocation tends to be coreless, especially when under strained conditions.",
author = "R. Liu and J. Mei and Fernando Ponce and Y. Narukawa and H. Omiya and T. Mukai",
year = "2005",
month = jun,
day = "30",
doi = "10.1063/1.1994070",
language = "English (US)",
isbn = "0735402574",
series = "AIP Conference Proceedings",
pages = "215--216",
booktitle = "PHYSICS OF SEMICONDUCTORS",
note = "PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors, ICPS-27 ; Conference date: 26-07-2004 Through 30-07-2004",
}