Strain measurements of SiGeC heteroepitaxial layers on Si(100) using ion beam analysis

S. Sego, Robert Culbertson, P. Ye, S. Hearne, J. Xiang, N. Herbots, Z. Atzmon, A. E. Bair

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The strain in SiGeC heteroepitaxial films grown on Si(100) substrates has been quantified using ion channeling. The films were grown both by combined ion beam and molecular beam epitaxy (CIMD) and chemical vapor deposition (CVD). Rutherford backscattering spectrometry (RBS) was used to quantify the Ge concentration as well as the film thickness, nuclear resonance elastic ion scattering was used to quantify the carbon concentration, and ion channeling was utilized to measure film quality. Channeling angular scans across an off normal major axis were used to quantify the strain. Part of the film was removed by using a solution of HF, HNO 3 and CH 3COOH in order to obtain a reliable scan in the substrate. The results indicate that C may be compensating for the strain introduced by Ge.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsDale C. Jacobson, David E. Luzzi, Tony F. Heinz, Masaya Iwaki
PublisherMaterials Research Society
Number of pages9
StatePublished - 1995
EventProceedings of the 1994 MRS Fall Meeting - Boston, MA, USA
Duration: Nov 28 1994Dec 2 1994


OtherProceedings of the 1994 MRS Fall Meeting
CityBoston, MA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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