Strain-induced suppression of weak localization in CVD-grown graphene

Xiaochang Miao, Sefaattin Tongay, Arthur F. Hebard

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5 Scopus citations


We investigate the magnetic-field- and temperature-dependent transport properties of CVD-grown graphene transferred to a flexible substrate (Kapton) and subjected to externally applied strain. In zero magnetic field, a logarithmic temperature-dependent conductivity correction, resulting from strong electron-electron interaction, becomes weaker with the application of strains as large as 0.6% because of an increased rate of chiral-symmetry-breaking scattering. With the application of a perpendicular magnetic field, we also observe positive magnetoconductance at low temperature (T=5K) due to weak localization. This magnetoconductance is suppressed with increasing strain, concomitant with a rapid decrease of the intervalley scattering rate (). Our results are in good agreement with theoretical expectations and are consistent with a strain-induced decoupling between graphene and its underlying Kapton substrate.

Original languageEnglish (US)
Article number475304
JournalJournal of Physics Condensed Matter
Issue number47
StatePublished - Nov 28 2012
Externally publishedYes

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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