Abstract
New method to grow high quality InGaN active layers for green laser diode applications. Our innovation is to grow 50nm thick film of InAlN on GaN, with equal compositions of In and Al. An InGaN QW will then be grown on the InAlN film. At a composition of 50%, InAlN is lattice matched to InGaN required for green laser diodes. This will reduce the lattice mismatch strain on the InGaN quantum well and will enable the growth of high quality InGaN films. The bandgap and refractive index of InAlN are comparable to those of GaN. Therefore, the InGaN quantum well will have good carrier confinement as well as optical confinement, critcal for laser diodes.
| Original language | English (US) |
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| State | Published - Nov 29 2005 |