Step bunching, chemical ordering, and diffusivity in Si
            1-yC
            y heteroepitaxy

F. Grosse; E. T. Croke; M. F. Gyure; M. Floyd; David Smith

Step bunching, chemical ordering, and diffusivity in Si _1-yC _y heteroepitaxy

F. Grosse, E. T. Croke, M. F. Gyure, M. Floyd, David Smith

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The growth of Si _1-yC _y on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	J.M. Millunchick, A.L. Barabasi, N.A. Modine, E.D. Jones
Pages	65-69
Number of pages	5
Volume	618
State	Published - 2000
Externally published	Yes
Event	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films - San Francisco, CA, United States Duration: Apr 24 2000 → Apr 27 2000

Other

Other	Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films
Country/Territory	United States
City	San Francisco, CA
Period	4/24/00 → 4/27/00

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Step bunching, chemical ordering, and diffusivity in Si _1-yC _y heteroepitaxy . / Grosse, F.; Croke, E. T.; Gyure, M. F. et al.
Materials Research Society Symposium - Proceedings. ed. / J.M. Millunchick; A.L. Barabasi; N.A. Modine; E.D. Jones. Vol. 618 2000. p. 65-69.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Grosse, F, Croke, ET, Gyure, MF, Floyd, M & Smith, D 2000, Step bunching, chemical ordering, and diffusivity in Si _1-yC _y heteroepitaxy in JM Millunchick, AL Barabasi, NA Modine & ED Jones (eds), Materials Research Society Symposium - Proceedings. vol. 618, pp. 65-69, Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films, San Francisco, CA, United States, 4/24/00.

@inproceedings{247cd09522714aa08663a8cf79f3bcfc,

title = "Step bunching, chemical ordering, and diffusivity in Si 1-yC y heteroepitaxy ",

abstract = "The growth of Si 1-yC y on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching. ",

author = "F. Grosse and Croke, {E. T.} and Gyure, {M. F.} and M. Floyd and David Smith",

year = "2000",

language = "English (US)",

volume = "618",

pages = "65--69",

editor = "J.M. Millunchick and A.L. Barabasi and N.A. Modine and E.D. Jones",

booktitle = "Materials Research Society Symposium - Proceedings",

note = "Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films ; Conference date: 24-04-2000 Through 27-04-2000",

}

TY - GEN

T1 - Step bunching, chemical ordering, and diffusivity in Si 1-yC y heteroepitaxy

AU - Grosse, F.

AU - Croke, E. T.

AU - Gyure, M. F.

AU - Floyd, M.

AU - Smith, David

PY - 2000

Y1 - 2000

N2 - The growth of Si 1-yC y on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching.

AB - The growth of Si 1-yC y on Si(001) and Si(118) surfaces is investigated experimentally and theoretically. A step instability is found on (118) surfaces leading to step bunching, under low C-concentrations. This behavior is explained by increased diffusivity of Si dimers in the vicinity of carbon. Self adjusting step bunches are found in kinetic Monte Carlo simulations with ordering of the carbon along nearly (001) planes. Experimental parameters (i.e., temperature, flux rate, and tilt angle of the substrate), which are controllable experimentally, can be used to adjust the length scale of the step bunching.

UR - http://www.scopus.com/inward/record.url?scp=0034447247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034447247&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0034447247

VL - 618

SP - 65

EP - 69

BT - Materials Research Society Symposium - Proceedings

A2 - Millunchick, J.M.

A2 - Barabasi, A.L.

A2 - Modine, N.A.

A2 - Jones, E.D.

T2 - Morphological and Compositional Evolution of Heteroepitaxial Semiconductor Thin Films

Y2 - 24 April 2000 through 27 April 2000

ER -

Step bunching, chemical ordering, and diffusivity in Si _1-yC _y heteroepitaxy

Abstract

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ASJC Scopus subject areas

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