Spectroscopic study of microwave-enhanced silicon exfoliation

D. C. Thompson, Terry Alford, J. W. Mayer

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Infrared spectroscopy and Rutherford backscattering spectrometry are used to study the effect of microwaves on hydrogen implanted silicon. Infrared spectra demonstrate that the hydride species formed in hydrogen implant and microwave annealed silicon result in exfoliation in a manner similar to that in conductively annealed samples. The infrared spectra of microwave annealed samples reveal an increase in internal surface formation prior to exfoliation. This increase in internal surface formation demonstrates how microwave anneals can decrease the incubation time required prior to exfoliation. Rutherford backscattering and infrared spectra are presented to elucidate the minimized impact of the microwave effect in boron-hydrogen coimplanted silicon.

Original languageEnglish (US)
Article number082102
JournalApplied Physics Letters
Issue number8
StatePublished - 2008

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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