Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor-phase epitaxial gallium arsenide

B. Lee, K. Arai, B. J. Skromme, S. S. Bose, T. J. Roth, J. A. Aguilar, T. R. Lepkowski, N. C. Tien, G. E. Stillman

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