@inproceedings{6d92ad8a0f374292be05486f61fd8c23,
title = "SOI MESFET RF power amplifiers at the 45nm node",
abstract = "A high voltage compliance silicon metal-semiconductor-field-effect- transistor (MESFET) fabricated using a 45nm SOI CMOS process has been designed for RF power amplifier applications requiring Pout greater than 1W. The breakdown voltage of the MESFET is more than 15V and allows a large-signal drain voltage swing that greatly exceeds the breakdown of the 45nm CMOS. The DC and AC characteristics of the MESFET have been used to extract an Angelov Spice model of the device for simulation of the RF power amplifier. A Class AB MESFET PA was designed for operation at 900 MHz and demonstrated a peak power added efficiency of 37.6 %, gain of 11.1 dB, OIP3 of 39.3 dBm and 1 dB compression point at an output power of 31.6 dBm. The first measurements of a SOI MESFET 2GHz RF power amplifier are also shown.",
keywords = "Angelov model, MESFETs, power amplifiers, silicon-on-insulator (SOI)",
author = "Wilk, {Seth J.} and William Lepkowski and Trevor Thornton",
year = "2014",
month = jan,
day = "1",
doi = "10.1109/PAWR.2014.6825725",
language = "English (US)",
isbn = "9781479927784",
series = "PAWR 2014 - Proceedings: 2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications",
publisher = "IEEE Computer Society",
pages = "55--57",
booktitle = "PAWR 2014 - Proceedings",
note = "2014 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications, PAWR 2014 ; Conference date: 19-01-2014 Through 22-01-2014",
}