SnGe superstructure materials for Si-based infrared optoelectronics were studied. Single crystal SnxGe1-x alloys (x = 0.02-0.2) were grown directly on Si via chemical vapor deposition with deuterium-stabilized Sn hydrides. Optical measurement results showed that the band gaps get narrow when Sn concentration was increased.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)