Smooth quantum hydrodynamic model vs. NEMO simulation of resonant tunneling diodes

Carl Gardner, Gerhard Klimeck, Christian Ringhofer

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


The smooth quantum hydrodynamic model is an extension of the classical hydrodynamic model for semiconductor devices which can handle in a mathematically rigorous way the discontinuities in the classical potential energy which occur at heterojunction barriers in quantum semiconductor devices. Smooth QHD model simulations of the current-voltage curves of resonant tunneling diodes are presented which exhibit negative differential resistance - the experimental signal for quantum resonance effects - and are compared with the experimentally verified current-voltage curves predicted by the simulator NEMO, which uses a non-equilibrium Green function method.

Original languageEnglish (US)
Pages (from-to)95-102
Number of pages8
JournalJournal of Computational Electronics
Issue number2
StatePublished - Apr 2004


  • NEMO
  • Quantum hydrodynamic model
  • Resonant tunneling diode

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Modeling and Simulation
  • Electrical and Electronic Engineering


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