Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Saeed Zeinolabedinzadeh; Hanbin Ying; Zachary E. Fleetwood; Nicolas J.H. Roche; Ani Khachatrian; Dale McMorrow; Stephen P. Buchner; Jeffrey H. Warner; Pauline Paki-Amouzou; John D. Cressler

doi:10.1109/TNS.2016.2631431

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Saeed Zeinolabedinzadeh, Hanbin Ying, Zachary E. Fleetwood, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Original language	English (US)
Article number	7752918
Pages (from-to)	125-132
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	64
Issue number	1
DOIs	https://doi.org/10.1109/TNS.2016.2631431
State	Published - Jan 2017
Externally published	Yes

Keywords

Cubesat
SiGe
X-band
extreme environments
radar
radiometer
receiver
satellite
silicon-germanium
single-event transient
space missions
two-photon absorption laser

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis",

abstract = "The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.",

keywords = "Cubesat, SiGe, X-band, extreme environments, radar, radiometer, receiver, satellite, silicon-germanium, single-event transient, space missions, two-photon absorption laser",

author = "Saeed Zeinolabedinzadeh and Hanbin Ying and Fleetwood, {Zachary E.} and Roche, {Nicolas J.H.} and Ani Khachatrian and Dale McMorrow and Buchner, {Stephen P.} and Warner, {Jeffrey H.} and Pauline Paki-Amouzou and Cressler, {John D.}",

note = "Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2017",

month = jan,

doi = "10.1109/TNS.2016.2631431",

language = "English (US)",

volume = "64",

pages = "125--132",

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T2 - Experiment and Analysis

AU - Zeinolabedinzadeh, Saeed

AU - Ying, Hanbin

AU - Fleetwood, Zachary E.

AU - Roche, Nicolas J.H.

AU - Khachatrian, Ani

AU - McMorrow, Dale

AU - Buchner, Stephen P.

AU - Warner, Jeffrey H.

AU - Paki-Amouzou, Pauline

AU - Cressler, John D.

PY - 2017/1

Y1 - 2017/1

N2 - The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

AB - The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

KW - Cubesat

KW - SiGe

KW - X-band

KW - extreme environments

KW - radar

KW - radiometer

KW - receiver

KW - satellite

KW - silicon-germanium

KW - single-event transient

KW - space missions

KW - two-photon absorption laser

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JF - IEEE Transactions on Nuclear Science

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Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Abstract

Keywords

ASJC Scopus subject areas

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