Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

Saeed Zeinolabedinzadeh, Hanbin Ying, Zachary E. Fleetwood, Nicolas J.H. Roche, Ani Khachatrian, Dale McMorrow, Stephen P. Buchner, Jeffrey H. Warner, Pauline Paki-Amouzou, John D. Cressler

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Original languageEnglish (US)
Article number7752918
Pages (from-to)125-132
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number1
StatePublished - Jan 2017
Externally publishedYes


  • Cubesat
  • SiGe
  • X-band
  • extreme environments
  • radar
  • radiometer
  • receiver
  • satellite
  • silicon-germanium
  • single-event transient
  • space missions
  • two-photon absorption laser

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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