Single-electron quantum dots in silicon MOS structures

M. Khoury; A. Gunther; S. Miličić; J. Rack; Stephen Goodnick; Dragica Vasileska; Trevor Thornton; D. K. Ferry

doi:10.1007/s003390000554

Single-electron quantum dots in silicon MOS structures

M. Khoury, A. Gunther, S. Miličić, J. Rack, Stephen Goodnick, Dragica Vasileska, Trevor Thornton, D. K. Ferry

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

Original language	English (US)
Pages (from-to)	415-421
Number of pages	7
Journal	Applied Physics A: Materials Science and Processing
Volume	71
Issue number	4
DOIs	https://doi.org/10.1007/s003390000554
State	Published - Oct 2000

ASJC Scopus subject areas

Chemistry(all)
Materials Science(all)

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10.1007/s003390000554

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title = "Single-electron quantum dots in silicon MOS structures",

abstract = "We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.",

author = "M. Khoury and A. Gunther and S. Mili{\v c}i{\'c} and J. Rack and Stephen Goodnick and Dragica Vasileska and Trevor Thornton and Ferry, {D. K.}",

year = "2000",

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AU - Khoury, M.

AU - Gunther, A.

AU - Miličić, S.

AU - Rack, J.

AU - Goodnick, Stephen

AU - Vasileska, Dragica

AU - Thornton, Trevor

AU - Ferry, D. K.

PY - 2000/10

Y1 - 2000/10

N2 - We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

AB - We present experimental results for two types of quantum dots, which are embedded within a silicon metal-oxide-semiconductor structure. Evidence is found for single-electron charging at low temperature, and for an asymmetric shape of the dot. First results of simulations of these dots are presented.

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M3 - Article

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JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

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Single-electron quantum dots in silicon MOS structures

Abstract

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