Single electron calculations for the Si L2, 3 near edge structure

Xudong Weng, Peter Rez, P. E. Batson

Research output: Contribution to journalArticlepeer-review

29 Scopus citations


We show, for the first time, that the near edge structure of the crystalline silicon L2, 3 edge in absorption spectroscopy at an energy resolution of 0.3 eV can be largely explained without invoking many-body effects, or core excitons. Previous attempts to compare experimental results with total density of final states, without matrix element weighting, have lead to erroneous interpretations.

Original languageEnglish (US)
Pages (from-to)1013-1016
Number of pages4
JournalSolid State Communications
Issue number9
StatePublished - Jun 1990

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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