Simulations, practical limitations, and novel growth technology for InGaN-based solar cells

Chloe A M Fabien, Michael Moseley, Brendan Gunning, W. Alan Doolittle, Alec M. Fischer, Yong O. Wei, Fernando Ponce

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


Indium gallium nitride (InGaN) alloys exhibit substantial potential for high-efficiency photovoltaics. However, theoretical promise still needs to be experimentally realized. This paper presents a detailed theoretical study to provide guidelines to achieve high-efficiency InGaN solar cells. While the efficiency of heterojunction devices is limited to ∼11%, homojunction devices can achieve suitable efficiencies, provided that highly p-type-doped InGaN layers and thick, single-phase InGaN films can be grown. Thus, we have developed a novel growth technology that facilitates growth of p-type nitride films with greatly improved hole concentration and growth of InGaN without phase separation, offering promise for future high-efficiency InGaN solar cells.

Original languageEnglish (US)
Article number6683005
Pages (from-to)601-606
Number of pages6
JournalIEEE Journal of Photovoltaics
Issue number2
StatePublished - Mar 2014


  • Crystal microstructure
  • doping
  • indium gallium nitride (InGaN)
  • semiconductor device modeling
  • semiconductor growth
  • solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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