TY - JOUR
T1 - Simulations for surface profile imaging
AU - Lu, Ping
AU - Smith, David
N1 - Funding Information:
This work has been supported by NSF Grant DMR-8514583. We are grateful to Dr. G.J. WOOd for use of his image simulation programs and the referee (Dr. M.A. O'Keefe) for helpful comments.
PY - 1988
Y1 - 1988
N2 - The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO2, TbO2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.
AB - The feasibility of quantifying surface structures using the profile imaging technique in high-resolution electron microscopy has been considered using theoretical multi-slice simulations. The possibilities for observing surfaces with missing or additional atoms, or with reconstruction, have been investigated in detail, with reference to particular oxides (UO2, TbO2) and compound semiconductors (CdTe, GaAs). The influence of such factors as incident beam misalignment, accelerating voltage, objective lens defocus and crystal thickness on the apparent surface relaxation were also considered, together with the possibility of eliminating any artefacts by using a focal series restoration.
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U2 - 10.1016/0304-3991(88)90002-2
DO - 10.1016/0304-3991(88)90002-2
M3 - Article
AN - SCOPUS:0023863517
SN - 0304-3991
VL - 25
SP - 265
EP - 277
JO - Ultramicroscopy
JF - Ultramicroscopy
IS - 4
ER -