Simulation of TID effects in a high voltage ring oscillator

Garrett J. Schlenvogt, Hugh Barnaby, Jeff Wilkinson, Scott Morrison, Larry Tyler

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Oscillation frequency of a high voltage ring oscillator is observed to change non-linearly with increasing dose. The change in oscillation is caused by buildup of oxide-trapped charge in both gate and isolation oxides post-radiation. A simulation methodology is described and implemented which successfully re-creates oscillator response by way of radiation-enabled simulation. Implementation of radiation-enabled simulation of ring oscillator is discussed. Simulation allows projection of oscillator response in-situ, allowing designers to anticipate changes in oscillation and implement radiation hardening as required. Alternatively, implementation of a ring oscillator as a reliability monitor in a large-scale circuit allows easily detectable observation of total dose effects on transistors.

Original languageEnglish (US)
Article number6678312
Pages (from-to)4547-4554
Number of pages8
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 2013


  • Design
  • oxide trapped charge
  • radiation
  • ring oscillator
  • shallow trench isolation
  • total ionizing dose

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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