SIMS Studies of 9Be Implants in Semi-Insulating InP

J. D. Oberstar, B. G. Streetman, J. E. Baker, Peter Williams

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


The migration of implanted 9Be in (100) semi-insulating InP during thermal annealing has been studied using secondary ion mass spectrometry. Under typical annealing conditions for InP (T ≥ 700°C, t = 15-30 min) we have observed that implanted 9Be is a rapid diffusant in semi-insulating InP for fluences as low as 1 x 1013 cm–2. Redistribution of the compensating impurity (Fe or Cr) has also been observed. In several respects Cr redistribution differs from that of Fe. Twin-peaked structures appear in the impurity profiles of 550°C anneals of 100 keV, 1015 cm-2 9Be implanted materials. Models for this phenomenon are discussed. Correlations are noted between 9Be and compensating impurity profiles in annealed, high fiuence implanted samples. Flat tails of 9Be extending over several microns are observed in semi-insulating InP.

Original languageEnglish (US)
Pages (from-to)1312-1320
Number of pages9
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - Jun 1982
Externally publishedYes


  • anneal
  • implantation
  • impurity redistribution

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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