Silicon quantum wires oxidation and transport studies

H. I. Liu, D. K. Biegelsen, N. M. Johnson, F. A. Ponce, N. I. Maluf, R. F.W. Pease

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


Fabricating well controlled nanostructures and obtaining precise structural, electrical, and optical information from them are essential for understanding the intrinsic properties of silicon (Si) nanostructures, which in turn is important for exploring the potential of quantum confinement induced light emission from crystalline Si. A combination of high resolution electron beam lithography, anisotropic reactive ion etching (RIE), and thermal oxidation has been successfully applied to obtain sub-5 nm Si columnar structures. A transmission electron microscopy (TEM) technique has also been used to characterize the precise structural dimensions of these columns. To obtain the electrical and optical information, a process based on polyimide planarization was developed to establish electrical contacts to these nanostructures. The same process is also applicable for fabricating device structures to study electrically pumped optical response. Preliminary transport studies have confirmed current conduction through the Si nano-pillars and yielded an estimate of the conductivity.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium Proceedings
PublisherPubl by Materials Research Society
Number of pages7
ISBN (Print)1558991786
StatePublished - Jan 1 1993
Externally publishedYes
EventProceedings of the Second Symposium on Dynamics in Small Confining Systems - Boston, MA, USA
Duration: Nov 30 1992Dec 4 1992

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


OtherProceedings of the Second Symposium on Dynamics in Small Confining Systems
CityBoston, MA, USA

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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