TY - JOUR
T1 - Silicon-based integrated MOSFETS and MESFETS
T2 - A new paradigm for low power, mixed signal, monolithic systems using commercially available SOI
AU - Yang, Jinman
AU - Balijepalli, Asha
AU - Thornton, Trevor
AU - Vandersand, James
AU - Blalock, Benjamin J.
AU - Wood, Michael E.
AU - Mojarradi, Mohammad M.
N1 - Funding Information:
The work described in this paper was carried out under a contract with the Air Force Research Laboratory and the Defense Advanced Research Projects Agency, and for the Jet Propulsion Laboratory, California Institute of Technology under a contract with the National Aeronautics and Space Administration.
PY - 2006/6
Y1 - 2006/6
N2 - Metal Semiconductor Field Effect Transistors fabricated using compound semiconductor materials have important applications in high-speed/low-noise communication systems. However, their integration densities are low compared to silicon technologies, and it is difficult to combine them with conventional CMOS for single-chip, mixed-signal circuit applications. In this paper we describe how silicon-on-insulator MESFETs can be fabricated alongside conventional MOSFETs using a commercially available silicon-on-insulator foundry. The process flow for the integrated MOSFETS and MESFETs is presented. Measurements from MESFETs fabricated using a commercial foundry demonstrate good depletion-mode device operation. The measured data confirms a square-law behavior for the saturated drain current, which can be reproduced using readily available MESFET models for Spice circuit simulation. The Spice model is applied to a simple differential-pair amplifier and the modeled results compared to measured data.
AB - Metal Semiconductor Field Effect Transistors fabricated using compound semiconductor materials have important applications in high-speed/low-noise communication systems. However, their integration densities are low compared to silicon technologies, and it is difficult to combine them with conventional CMOS for single-chip, mixed-signal circuit applications. In this paper we describe how silicon-on-insulator MESFETs can be fabricated alongside conventional MOSFETs using a commercially available silicon-on-insulator foundry. The process flow for the integrated MOSFETS and MESFETs is presented. Measurements from MESFETs fabricated using a commercial foundry demonstrate good depletion-mode device operation. The measured data confirms a square-law behavior for the saturated drain current, which can be reproduced using readily available MESFET models for Spice circuit simulation. The Spice model is applied to a simple differential-pair amplifier and the modeled results compared to measured data.
KW - MESFETs
KW - Silicon on insulator
KW - Spice models
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U2 - 10.1142/S0129156406003977
DO - 10.1142/S0129156406003977
M3 - Article
AN - SCOPUS:33748451673
SN - 0129-1564
VL - 16
SP - 723
EP - 732
JO - International Journal of High Speed Electronics and Systems
JF - International Journal of High Speed Electronics and Systems
IS - 2
ER -