Si(100) surface corrosion by NH4F studied using high spatial resolution secondary electron imaging in a UHV-STEM

Jeffery Drucker; A. Bandari; Veronica Burrows

Si(100) surface corrosion by NH₄F studied using high spatial resolution secondary electron imaging in a UHV-STEM

Jeffery Drucker, A. Bandari, Veronica Burrows

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Corrosion of the Si(100) surface by concentrated NH₄F solutions was studied using high spatial resolution secondary electron imaging in an ultra-high vacuum scanning transmission electron microscope. Various corrosion mechanisms were investigated by varying the ex-situ chemical treatment of the samples. Entirely different surface morphologies were obtained for surfaces that were kept in solution for short times (approximately minutes) vs. long times (approximately 24 hours) and surfaces which were rinsed in DI H₂O vs. those which weren't . These measurements confirm that corrosion continues after the samples are removed from the solution and seems to be correlated with the formation of the Si hexafluorometallate salt. This salt is extremely electron beam sensitive and desorbs in UHV at temperatures below 250 °C.

Original language	English (US)
Title of host publication	Surface Chemical Cleaning and Passivation for Semiconductor Processing
Editors	Gregg S. Higashi, Eugene A. Irene, Tadahiro Ohmi
Publisher	Publ by Materials Research Society
Pages	479-484
Number of pages	6
ISBN (Print)	1558992138
State	Published - Dec 1 1993
Event	Proceedings of the 1993 Spring Meeting of the Materials Research Society - San Francisco, CA, USA Duration: Apr 13 1993 → Apr 15 1993

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	315
ISSN (Print)	0272-9172

Other

Other	Proceedings of the 1993 Spring Meeting of the Materials Research Society
City	San Francisco, CA, USA
Period	4/13/93 → 4/15/93

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

Drucker, J., Bandari, A., & Burrows, V. (1993). Si(100) surface corrosion by NH₄F studied using high spatial resolution secondary electron imaging in a UHV-STEM. In G. S. Higashi, E. A. Irene, & T. Ohmi (Eds.), Surface Chemical Cleaning and Passivation for Semiconductor Processing (pp. 479-484). (Materials Research Society Symposium Proceedings; Vol. 315). Publ by Materials Research Society.

Si(100) surface corrosion by NH₄F studied using high spatial resolution secondary electron imaging in a UHV-STEM. / Drucker, Jeffery; Bandari, A.; Burrows, Veronica.
Surface Chemical Cleaning and Passivation for Semiconductor Processing. ed. / Gregg S. Higashi; Eugene A. Irene; Tadahiro Ohmi. Publ by Materials Research Society, 1993. p. 479-484 (Materials Research Society Symposium Proceedings; Vol. 315).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Drucker, J, Bandari, A & Burrows, V 1993, Si(100) surface corrosion by NH₄F studied using high spatial resolution secondary electron imaging in a UHV-STEM. in GS Higashi, EA Irene & T Ohmi (eds), Surface Chemical Cleaning and Passivation for Semiconductor Processing. Materials Research Society Symposium Proceedings, vol. 315, Publ by Materials Research Society, pp. 479-484, Proceedings of the 1993 Spring Meeting of the Materials Research Society, San Francisco, CA, USA, 4/13/93.

Drucker, Jeffery ; Bandari, A. ; Burrows, Veronica. / Si(100) surface corrosion by NH₄F studied using high spatial resolution secondary electron imaging in a UHV-STEM. Surface Chemical Cleaning and Passivation for Semiconductor Processing. editor / Gregg S. Higashi ; Eugene A. Irene ; Tadahiro Ohmi. Publ by Materials Research Society, 1993. pp. 479-484 (Materials Research Society Symposium Proceedings).

@inproceedings{152f1e8a29eb46a9add67aa845b8a277,

title = "Si(100) surface corrosion by NH4F studied using high spatial resolution secondary electron imaging in a UHV-STEM",

abstract = "Corrosion of the Si(100) surface by concentrated NH4F solutions was studied using high spatial resolution secondary electron imaging in an ultra-high vacuum scanning transmission electron microscope. Various corrosion mechanisms were investigated by varying the ex-situ chemical treatment of the samples. Entirely different surface morphologies were obtained for surfaces that were kept in solution for short times (approximately minutes) vs. long times (approximately 24 hours) and surfaces which were rinsed in DI H2O vs. those which weren't . These measurements confirm that corrosion continues after the samples are removed from the solution and seems to be correlated with the formation of the Si hexafluorometallate salt. This salt is extremely electron beam sensitive and desorbs in UHV at temperatures below 250 °C.",

author = "Jeffery Drucker and A. Bandari and Veronica Burrows",

year = "1993",

month = dec,

day = "1",

language = "English (US)",

isbn = "1558992138",

series = "Materials Research Society Symposium Proceedings",

publisher = "Publ by Materials Research Society",

pages = "479--484",

editor = "Higashi, {Gregg S.} and Irene, {Eugene A.} and Tadahiro Ohmi",

booktitle = "Surface Chemical Cleaning and Passivation for Semiconductor Processing",

note = "Proceedings of the 1993 Spring Meeting of the Materials Research Society ; Conference date: 13-04-1993 Through 15-04-1993",

}

TY - GEN

T1 - Si(100) surface corrosion by NH4F studied using high spatial resolution secondary electron imaging in a UHV-STEM

AU - Drucker, Jeffery

AU - Bandari, A.

AU - Burrows, Veronica

PY - 1993/12/1

Y1 - 1993/12/1

N2 - Corrosion of the Si(100) surface by concentrated NH4F solutions was studied using high spatial resolution secondary electron imaging in an ultra-high vacuum scanning transmission electron microscope. Various corrosion mechanisms were investigated by varying the ex-situ chemical treatment of the samples. Entirely different surface morphologies were obtained for surfaces that were kept in solution for short times (approximately minutes) vs. long times (approximately 24 hours) and surfaces which were rinsed in DI H2O vs. those which weren't . These measurements confirm that corrosion continues after the samples are removed from the solution and seems to be correlated with the formation of the Si hexafluorometallate salt. This salt is extremely electron beam sensitive and desorbs in UHV at temperatures below 250 °C.

AB - Corrosion of the Si(100) surface by concentrated NH4F solutions was studied using high spatial resolution secondary electron imaging in an ultra-high vacuum scanning transmission electron microscope. Various corrosion mechanisms were investigated by varying the ex-situ chemical treatment of the samples. Entirely different surface morphologies were obtained for surfaces that were kept in solution for short times (approximately minutes) vs. long times (approximately 24 hours) and surfaces which were rinsed in DI H2O vs. those which weren't . These measurements confirm that corrosion continues after the samples are removed from the solution and seems to be correlated with the formation of the Si hexafluorometallate salt. This salt is extremely electron beam sensitive and desorbs in UHV at temperatures below 250 °C.

UR - http://www.scopus.com/inward/record.url?scp=0027836516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0027836516&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0027836516

SN - 1558992138

T3 - Materials Research Society Symposium Proceedings

SP - 479

EP - 484

BT - Surface Chemical Cleaning and Passivation for Semiconductor Processing

A2 - Higashi, Gregg S.

A2 - Irene, Eugene A.

A2 - Ohmi, Tadahiro

PB - Publ by Materials Research Society

T2 - Proceedings of the 1993 Spring Meeting of the Materials Research Society

Y2 - 13 April 1993 through 15 April 1993

ER -