Short-wavelength intersubband light emission from optically pumped GaN/AlN quantum wells

Roberto Paiella, Kristina Driscoll, Yitao Liao, Anirban Bhattacharyya, Lin Zhou, David Smith, Theodore D. Moustakas

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Due to their large conduction-band offsets, GaN/Al(Ga)N quantum wells are currently the subject of extensive research efforts aimed at extending the spectral range of intersubband optoelectronic devices towards shorter and shorter wavelengths. Here we report our recent measurement of optically pumped intersubband light emission from GaN/AlN quantum wells at the record short wavelength of about 2 μm. Nanosecond-scale optical pulses are used to resonantly pump electrons from the ground states to the second excited subbands, followed by radiative relaxation into the first excited subbands. The intersubband origin of the measured photoluminescence is confirmed via an extensive study of its polarization properties and pump wavelength dependence.

Original languageEnglish (US)
Title of host publicationIII-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interactions
Number of pages5
StatePublished - 2010
Event2009 MRS Fall Meeting - Boston, MA, United States
Duration: Nov 30 2009Dec 2 2009

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Other2009 MRS Fall Meeting
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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