Self-organized nanoscale Ge dots and dashes on SiGe/Si superlattices

L. Fitting, M. E. Ware, J. R. Haywood, Jennifer J.H. Walter, R. J. Nemanich

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


This study explores the self-organization of Ge nanostructures on SiGe/Si superlattices grown on Si substrates with the surface normal tilted from (001) towards (111) by up to 25°. Prior studies found two-dimensional ordering of Ge dots on nominally flat Si(001) surfaces with a very homogeneous size distribution. Our results show that the Ge islands are less ordered for tilted Si(001) substrates. For substrates with a miscut of 25°, Ge dots nucleate on top of the ripples that form approximately perpendicular to the [1-10]Si direction, i.e., perpendicular to the step direction. Additionally, we observe the formation of Ge dashes, which align preferentially along the [1-10]Si direction.

Original languageEnglish (US)
Article number024317
JournalJournal of Applied Physics
Issue number2
StatePublished - Jul 15 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)


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