Abstract
This study explores the self-organization of Ge nanostructures on SiGe/Si superlattices grown on Si substrates with the surface normal tilted from (001) towards (111) by up to 25°. Prior studies found two-dimensional ordering of Ge dots on nominally flat Si(001) surfaces with a very homogeneous size distribution. Our results show that the Ge islands are less ordered for tilted Si(001) substrates. For substrates with a miscut of 25°, Ge dots nucleate on top of the ripples that form approximately perpendicular to the [1-10]Si direction, i.e., perpendicular to the step direction. Additionally, we observe the formation of Ge dashes, which align preferentially along the [1-10]Si direction.
Original language | English (US) |
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Article number | 024317 |
Journal | Journal of Applied Physics |
Volume | 98 |
Issue number | 2 |
DOIs | |
State | Published - Jul 15 2005 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)