Abstract
The ability to control structural dimensions below 5 nm is essential for a systematic study of the optical and electrical properties of Si nanostructures. A combination of electron beam lithography, NF3 reactive ion etching, and dry thermal oxidation has been successfully implemented to yield 2-nm-wide Si nanowires with aspect ratio of more than 100 to 1. With a sideview transmission electron microscopy technique, the oxidation progression of Si nanowires was characterized over a range of temperature from 800 to 1200°C. A previously reported self-limiting oxidation phenomenon was found to occur only for oxidation temperatures below 950°C. A preliminary model suggests that increase in the activation energy of oxidant diffusivity in a highly stressed oxide may be the main mechanism for slowing down the oxidation rate in the self-limiting regime.
Original language | English (US) |
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Pages (from-to) | 1383-1385 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 64 |
Issue number | 11 |
DOIs | |
State | Published - 1994 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)