TY - GEN
T1 - Self-heating and short-range Coulomb interactions due to traps in a 10 nm channel length nanowire transistor
AU - Hossain, Arif
AU - Vasileska, Dragica
AU - Goodnick, Stephen
PY - 2011/12/1
Y1 - 2011/12/1
N2 - In previous works we have investigated the degradation in the ON-current due to self-heating effects in 10 nm channel length nanowire transistors. In this work we examine the simultaneous influence of self-heating and random trapping effects on the magnitude of the ON current. Both positively and negatively charged single traps are considered in the analysis. Our investigations suggest that self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing for more carriers to go through, and (2) via the screening effect of the Coulomb potential. Namely, presence of more carriers in the channel means more screening and more screening means less impact due to the potential barrier of the negatively charged trap at the source injection barrier, but this at the same time means more self-heating.
AB - In previous works we have investigated the degradation in the ON-current due to self-heating effects in 10 nm channel length nanowire transistors. In this work we examine the simultaneous influence of self-heating and random trapping effects on the magnitude of the ON current. Both positively and negatively charged single traps are considered in the analysis. Our investigations suggest that self-heating effects affect the ON-current in two ways: (1) by lowering the barrier at the source end of the channel, thus allowing for more carriers to go through, and (2) via the screening effect of the Coulomb potential. Namely, presence of more carriers in the channel means more screening and more screening means less impact due to the potential barrier of the negatively charged trap at the source injection barrier, but this at the same time means more self-heating.
KW - Random interface trap/impurity
KW - Self-heating effects
KW - Short range Coulomb interactions
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U2 - 10.1109/NANO.2011.6144513
DO - 10.1109/NANO.2011.6144513
M3 - Conference contribution
AN - SCOPUS:84858995034
SN - 9781457715143
T3 - Proceedings of the IEEE Conference on Nanotechnology
SP - 1110
EP - 1113
BT - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
T2 - 2011 11th IEEE International Conference on Nanotechnology, NANO 2011
Y2 - 15 August 2011 through 19 August 2011
ER -