Selective growth of GaN and Al
            0.2Ga
            0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

O. H. Nam; M. D. Bremser; B. L. Ward; Robert Nemanich; R. F. Davis

Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

O. H. Nam, M. D. Bremser, B. L. Ward, Robert Nemanich, R. F. Davis

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The selective growth of GaN and Al _0.2Ga _0.8N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the now rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

Original language	English (US)
Title of host publication	Materials Research Society Symposium - Proceedings
Editors	F.A. Ponce, T.D. Moustakas, I. Akasaki, B.A. Monemar
Publisher	Materials Research Society
Pages	107-112
Number of pages	6
Volume	449
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1996 MRS Fall Symposium - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996

Other

Other	Proceedings of the 1996 MRS Fall Symposium
City	Boston, MA, USA
Period	12/2/96 → 12/6/96

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Cite this

Nam, O. H., Bremser, M. D., Ward, B. L., Nemanich, R., & Davis, R. F. (1997). Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy In F. A. Ponce, T. D. Moustakas, I. Akasaki, & B. A. Monemar (Eds.), Materials Research Society Symposium - Proceedings (Vol. 449, pp. 107-112). Materials Research Society.

Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy . / Nam, O. H.; Bremser, M. D.; Ward, B. L. et al.
Materials Research Society Symposium - Proceedings. ed. / F.A. Ponce; T.D. Moustakas; I. Akasaki; B.A. Monemar. Vol. 449 Materials Research Society, 1997. p. 107-112.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Nam, OH, Bremser, MD, Ward, BL, Nemanich, R & Davis, RF 1997, Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy in FA Ponce, TD Moustakas, I Akasaki & BA Monemar (eds), Materials Research Society Symposium - Proceedings. vol. 449, Materials Research Society, pp. 107-112, Proceedings of the 1996 MRS Fall Symposium, Boston, MA, USA, 12/2/96.

Nam OH, Bremser MD, Ward BL, Nemanich R, Davis RF. Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy In Ponce FA, Moustakas TD, Akasaki I, Monemar BA, editors, Materials Research Society Symposium - Proceedings. Vol. 449. Materials Research Society. 1997. p. 107-112

Nam, O. H. ; Bremser, M. D. ; Ward, B. L. et al. / Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy Materials Research Society Symposium - Proceedings. editor / F.A. Ponce ; T.D. Moustakas ; I. Akasaki ; B.A. Monemar. Vol. 449 Materials Research Society, 1997. pp. 107-112

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title = "Selective growth of GaN and Al 0.2Ga 0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy ",

abstract = "The selective growth of GaN and Al 0.2Ga 0.8N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the now rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm. ",

author = "Nam, {O. H.} and Bremser, {M. D.} and Ward, {B. L.} and Robert Nemanich and Davis, {R. F.}",

year = "1997",

language = "English (US)",

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editor = "F.A. Ponce and T.D. Moustakas and I. Akasaki and B.A. Monemar",

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publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Fall Symposium ; Conference date: 02-12-1996 Through 06-12-1996",

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AU - Nam, O. H.

AU - Bremser, M. D.

AU - Ward, B. L.

AU - Nemanich, Robert

AU - Davis, R. F.

PY - 1997

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N2 - The selective growth of GaN and Al 0.2Ga 0.8N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the now rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

AB - The selective growth of GaN and Al 0.2Ga 0.8N has been conducted on stripe and circular patterned GaN/AlN/6H-SiC(0001) multilayer substrates. Growth morphologies on stripe patterns changed with the widths of stripes and the now rate of TEG. No ridge growth was observed along the edges of the stripe patterns, and the (0001) top facets were very smooth. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successfully grown on 5μm circular patterns. Field emission measurement of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25V/μm for an emission current of 10.8nA at an anode-to-sample distance of 27μm.

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VL - 449

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EP - 112

BT - Materials Research Society Symposium - Proceedings

A2 - Ponce, F.A.

A2 - Moustakas, T.D.

A2 - Akasaki, I.

A2 - Monemar, B.A.

PB - Materials Research Society

T2 - Proceedings of the 1996 MRS Fall Symposium

Y2 - 2 December 1996 through 6 December 1996

ER -

Selective growth of GaN and Al _0.2Ga _0.8N on GaN/AlN/6H-SiC (0001) multilayer substrates via organometallic vapor-phase epitaxy

Abstract

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