Selective deposition of ruthenium films by digital CVD

Jaydeb Goswami; Woo Noh; Sandwip Dey

doi:10.1002/cvde.200304176

Selective deposition of ruthenium films by digital CVD

Jaydeb Goswami, Woo Noh, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)₂cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO₂ surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO₂/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

Original language	English (US)
Pages (from-to)	94-98
Number of pages	5
Journal	Chemical Vapor Deposition
Volume	11
Issue number	2
DOIs	https://doi.org/10.1002/cvde.200304176
State	Published - Feb 2005

ASJC Scopus subject areas

General Chemistry
Surfaces and Interfaces
Process Chemistry and Technology

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abstract = "A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.",

author = "Jaydeb Goswami and Woo Noh and Sandwip Dey",

year = "2005",

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doi = "10.1002/cvde.200304176",

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AU - Noh, Woo

AU - Dey, Sandwip

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AB - A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

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Selective deposition of ruthenium films by digital CVD

Abstract

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