A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.
ASJC Scopus subject areas
- Surfaces and Interfaces
- Process Chemistry and Technology