Selective deposition of ruthenium films by digital CVD

Jaydeb Goswami; Woo Noh; Sandwip Dey

doi:10.1002/cvde.200304176

Selective deposition of ruthenium films by digital CVD

Jaydeb Goswami, Woo Noh, Sandwip Dey

Chemical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)₂cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO₂ surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO₂/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

Original language	English (US)
Pages (from-to)	94-98
Number of pages	5
Journal	Chemical Vapor Deposition
Volume	11
Issue number	2
DOIs	https://doi.org/10.1002/cvde.200304176
State	Published - Feb 2005

ASJC Scopus subject areas

Chemistry(all)
Surfaces and Interfaces
Process Chemistry and Technology

Access to Document

10.1002/cvde.200304176

Cite this

@article{32929b5f63de4e1e83824c4a20539a24,

title = "Selective deposition of ruthenium films by digital CVD",

abstract = "A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.",

author = "Jaydeb Goswami and Woo Noh and Sandwip Dey",

year = "2005",

month = feb,

doi = "10.1002/cvde.200304176",

language = "English (US)",

volume = "11",

pages = "94--98",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

publisher = "Wiley-VCH Verlag",

number = "2",

}

TY - JOUR

T1 - Selective deposition of ruthenium films by digital CVD

AU - Goswami, Jaydeb

AU - Noh, Woo

AU - Dey, Sandwip

PY - 2005/2

Y1 - 2005/2

N2 - A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

AB - A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

UR - http://www.scopus.com/inward/record.url?scp=15544384424&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=15544384424&partnerID=8YFLogxK

U2 - 10.1002/cvde.200304176

DO - 10.1002/cvde.200304176

M3 - Article

AN - SCOPUS:15544384424

SN - 0948-1907

VL - 11

SP - 94

EP - 98

JO - Chemical Vapor Deposition

JF - Chemical Vapor Deposition

IS - 2

ER -

Selective deposition of ruthenium films by digital CVD

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this