Selective deposition of ruthenium films by digital CVD

Jaydeb Goswami, Woo Noh, Sandwip Dey

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


A novel process to achieve selective deposition of ruthenium (Ru) films was carried out by using liquid-source digital-chemical vapor deposition and by alternate exposures of Ru(thd)2cod and oxygen. The selective deposition of Ru films were performed at 280-320°C on the exposed area of hydroxyl-terminated atomic layer deposition produced HfO2 surfaces patterned with photoresist. Ru films showed 100% step coverage on deposition at 290°C on patterned SiO2/Si substrates. The results show that the Ru films were dense and polycrystalline and also showed an electrical resistivity of 20.6 μωcm at 272 K.

Original languageEnglish (US)
Pages (from-to)94-98
Number of pages5
JournalChemical Vapor Deposition
Issue number2
StatePublished - Feb 2005

ASJC Scopus subject areas

  • Chemistry(all)
  • Surfaces and Interfaces
  • Process Chemistry and Technology


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