Selective bond breaking in amorphous hydrogenated silicon by using Duke FEL

D. Gracin, V. Borjanovic, B. Vlahovic, A. Sunda-Meya, T. M. Patterson, J. M. Dutta, S. Hauger, I. Pinayev, M. E. Ware, D. Alexson, R. J. Nemanich, B. Von Roedern

Research output: Contribution to journalConference articlepeer-review

3 Scopus citations


In order to study the possibility of influencing the phase containing predominantly Si-H bonds, while having minimal influence on the surrounding materials, samples of a-Si were exposed to Duke-FEL Mark III radiation. The wavelength of the radiation was selected to fit the absorption maximum of stretching vibrations of Si-H bonds (5μm). By varying the wavelength in the vicinity of 5μm, the illumination time and the power density, different types and degrees of structural ordering, of Si-H bonds and Si-Si bonds were obtained, and monitored by Raman spectroscopy. By increasing the energy density, at certain level the crystallization occurs. We were able to demonstrate a direct correlation between short and intermediate range ordering and the wavelength and intensity of the radiation. Using 5μm at 10kW/cm2 leads to increase in structural disordering. However, increasing power to 60kW/cm2 improves both short and intermediate order in a-Si:H, as demonstrated by Raman spectroscopy. Further increasing power density by an order of magnitude results in crystallization of the sample.

Original languageEnglish (US)
Pages (from-to)635-639
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Issue number1-3
StatePublished - Nov 21 2001
Externally publishedYes
Event22nd International Free Electron Laser Conference (FEL 2000) - Durham, NC, United States
Duration: Aug 13 2000Aug 18 2000


  • A-Si:H
  • FEL
  • Ordering
  • Raman spectroscopy
  • Recrystallization
  • Structure

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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