Selected energy epitaxial deposition of GaN and AlN on SiC(0001) using seeded supersonic free jets of NH₃ in helium

Engineering & Materials Science

• Helium 91%
• Rutherford backscattering spectroscopy 75%
• Chemisorption 61%
• Surface reactions 57%
• Buffer layers 57%
• Epitaxial growth 56%
• Atomic force microscopy 51%
• Gases 46%
• Gas mixtures 45%
• Spectroscopy 45%
• Film thickness 43%
• Evaporators 43%
• Seed 41%
• Transmission electron microscopy 41%
• Vacuum 35%
• Nozzles 35%
• Metals 25%

Physics & Astronomy

• free jets 100%
• helium 63%
• energy 23%
• supersonic nozzles 16%
• diluents 15%
• evaporators 14%
• chemisorption 12%
• surface reactions 11%
• gases 11%
• Auger spectroscopy 11%
• gas mixtures 10%
• seeds 10%
• backscattering 10%
• buffers 9%
• film thickness 9%
• incidence 9%
• atomic force microscopy 8%
• scaling 8%
• transmission electron microscopy 7%
• vacuum 7%
• spectroscopy 6%
• metals 5%

Chemical Compounds

• Jet 86%
• Energy 38%
• Liquid Film 19%
• Evaporator 18%
• Rutherford Backscattering Spectroscopy 17%
• Epitaxial Growth 16%
• Nozzle 15%
• Diluting Agent 14%
• Gas 14%
• Chemisorption 12%
• Vacuum 10%
• Atomic Force Microscopy 10%
• Transmission Electron Microscopy 8%
• Buffer Solution 8%
• Metal 6%
• Mixture 5%