Second-order Raman spectroscopy of AlAs: A test of lattice-dynamical models

G. S. Spencer, J. Grant, R. Gray, J. Zolman, Jose Menendez, R. Droopad, G. N. Maracas

Research output: Contribution to journalArticlepeer-review

14 Scopus citations


The second-order Raman spectrum of AlAs has been measured on samples grown by molecular-beam epitaxy (MBE). The results show significant discrepancies with model calculations of the phonon density of states, but are consistent with recent first-principles calculations. This first-principles approach has been used to compute the phonon energies in GaAs-AlAs superlattices, with controversial implications regarding the sharpness of MBE-grown interfaces. The Raman results presented here support the conclusions of the first-principles analysis.

Original languageEnglish (US)
Pages (from-to)5761-5764
Number of pages4
JournalPhysical Review B
Issue number8
StatePublished - 1994

ASJC Scopus subject areas

  • Condensed Matter Physics


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