SECOND ORDER DIFFERENCE SCHEME FOR TRANSIENT SEMICONDUCTOR DEVICE SIMULATION.

Christian Ringhofer

Research output: Contribution to journalArticlepeer-review

Abstract

A second order scheme for the solution of the transient fundamental semiconductor device equations is presented which does not suffer from timestep restrictions due to the stiffness of the analytical problem. The second order accuracy as well as the stability properties are demonstrated on the simulation of a p-n-junction diode.

Original languageEnglish (US)
Pages (from-to)253-278
Number of pages26
JournalTransactions of the Society for Computer Simulation
Volume3
Issue number4
StatePublished - Oct 1 1986

ASJC Scopus subject areas

  • Software
  • Modeling and Simulation
  • Computer Science Applications
  • Computer Graphics and Computer-Aided Design
  • Computational Theory and Mathematics

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