Schottky Junction Transistors for micropower RFICs

J. Spann; Zhiyuan Wu; P. Jaconelli; Jinman Yang; Trevor Thornton

Schottky Junction Transistors for micropower RFICs

J. Spann, Zhiyuan Wu, P. Jaconelli, Jinman Yang, Trevor Thornton

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 pm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

Original language	English (US)
Title of host publication	IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
Pages	423-426
Number of pages	4
State	Published - 2002
Event	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States Duration: Jun 2 2002 → Jun 4 2002

Other

Other	2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
Country/Territory	United States
City	Seatle, WA
Period	6/2/02 → 6/4/02

ASJC Scopus subject areas

Electrical and Electronic Engineering
Media Technology

Cite this

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title = "Schottky Junction Transistors for micropower RFICs",

abstract = "Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 pm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.",

author = "J. Spann and Zhiyuan Wu and P. Jaconelli and Jinman Yang and Trevor Thornton",

year = "2002",

language = "English (US)",

pages = "423--426",

booktitle = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

note = "2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium ; Conference date: 02-06-2002 Through 04-06-2002",

}

TY - GEN

T1 - Schottky Junction Transistors for micropower RFICs

AU - Spann, J.

AU - Wu, Zhiyuan

AU - Jaconelli, P.

AU - Yang, Jinman

AU - Thornton, Trevor

PY - 2002

Y1 - 2002

N2 - Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 pm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

AB - Results are presented from measurements and numerical simulations of Schottky Junction Transistors, a new type of micropower device capable of operating at GHz frequencies in the sub-threshold regime. Detailed measurements of the d.c. characteristics of a 2 μm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length device will have a cut-off frequency of 126 MHz, which is again consistent with the numerical simulations. When projected to gate lengths of 0.1 pm, cut-off frequencies in excess of 10 GHz are predicted for drain currents of less than 1 μA/μm.

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UR - http://www.scopus.com/inward/citedby.url?scp=0036309637&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036309637

SP - 423

EP - 426

BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

T2 - 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium

Y2 - 2 June 2002 through 4 June 2002

ER -

Schottky Junction Transistors for micropower RFICs

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