SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.

B. T. Moore; D. K. Ferry

doi:10.1116/1.570586

SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.

B. T. Moore, D. K. Ferry

Arizona State University

Research output: Contribution to journal › Conference article › peer-review

28 Scopus citations

Abstract

The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.

Original language	English (US)
Pages (from-to)	1037-1040
Number of pages	4
Journal	Journal of vacuum science & technology
Volume	17
Issue number	5
DOIs	https://doi.org/10.1116/1.570586
State	Published - Jan 1 1980
Event	Proc of the Annu Conf on the Phys of Compd Semicond Interfaces, 7th - Estes Park, CO, USA Duration: Jan 29 1980 → Jan 31 1980

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Engineering(all)

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10.1116/1.570586

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title = "SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.",

abstract = "The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.",

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AU - Ferry, D. K.

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Y1 - 1980/1/1

N2 - The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.

AB - The role of polar interface phonon scattering in determining mobility has been studied in inversion layers of MOS structures on InAs and Si. The comparison between mobility measurements and transport calculations is shown to provide an alternative method for determining interface properties. Transport at the Si/SO//2 interface is found to be dominated by several scattering mechanisms at various inversion densities. However, transport at the InAs/oxide interface is dominated entirely by surface roughness, because of the larger interface widths in this system. Interface phonon contributions are small.

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SCATTERING OF INVERSION LAYER ELECTRONS BY OXIDE POLAR MODE GENERATED INTERFACE PHONONS.

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