Abstract
Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.
Original language | English (US) |
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Article number | 252111 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 25 |
DOIs | |
State | Published - Jun 19 2006 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)