Scanning tunneling spectroscopy of methyl- and ethyl-terminated Si(111) surfaces

Hongbin Yu, Lauren J. Webb, James R. Heath, Nathan S. Lewis

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


Methyl- and ethyl-terminated Si(111) surfaces prepared by a two-step chlorination/alkylation method were characterized by low temperature scanning tunneling spectroscopy (STS), The STS data showed remarkably low levels of midgap states on the CH 3- and C 2H 5-terminated Si surfaces. A large conductance gap relative to the Si band gap was observed for both surfaces as well as for the hydrogen-terminated Si(111) surface. This large gap is ascribed to scanning tunneling microscope tip-induced band bending resulting from a low density of midgap states which avoid pinning of the Fermi levels on these passivated surfaces.

Original languageEnglish (US)
Article number252111
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 19 2006
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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