Abstract
Surface topographies of n-type /?-SiC single crystals epitaxially grown by chemical vapor deposition on Si(100) and Si substrates inclined at 4° off (100) toward (011) were imaged by a scanning tunneling microscope. The images suggest that smooth surfaces can be achieved by epitaxial growth on the 4°-off substrates. Oxidation of the β-SiC surfaces followed by chemical etching to remove the oxide layer also tend to produce smooth surfaces.
Original language | English (US) |
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Pages (from-to) | 696-698 |
Number of pages | 3 |
Journal | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films |
Volume | 6 |
Issue number | 3 |
DOIs | |
State | Published - May 1988 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films