Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

Zachary Lochner; Tsung Ting Kao; Yuh Shiuan Liu; Xiao Hang Li; Md Mahbub Satter; Shyh Chiang Shen; P. Douglas Yoder; Jae Hyun Ryou; Russell D. Dupuis; Yong Wei; Hongen Xie; Alec Fischer; Fernando Ponce

doi:10.1117/12.2008830

Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

Zachary Lochner, Tsung Ting Kao, Yuh Shiuan Liu, Xiao Hang Li, Md Mahbub Satter, Shyh Chiang Shen, P. Douglas Yoder, Jae Hyun Ryou, Russell D. Dupuis, Yong Wei, Hongen Xie, Alec Fischer, Fernando Ponce

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Scopus citations

Abstract

Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm² and laser emission is observed at 247 nm.

Original language	English (US)
Title of host publication	Gallium Nitride Materials and Devices VIII
DOIs	https://doi.org/10.1117/12.2008830
State	Published - 2013
Event	SPIE Symposium on Gallium Nitride Materials and Devices VIII - San Francisco, CA, United States Duration: Feb 4 2013 → Feb 7 2013

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8625
ISSN (Print)	0277-786X

Other

Other	SPIE Symposium on Gallium Nitride Materials and Devices VIII
Country/Territory	United States
City	San Francisco, CA
Period	2/4/13 → 2/7/13

Keywords

Deep ultraviolet
III-V semiconductors
Lasers
Metalorganic chemical vapor deposition
Optical pumping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2008830

Cite this

Lochner, Z., Kao, T. T., Liu, Y. S., Li, X. H., Satter, M. M., Shen, S. C., Yoder, P. D., Ryou, J. H., Dupuis, R. D., Wei, Y., Xie, H., Fischer, A., & Ponce, F. (2013). Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. In Gallium Nitride Materials and Devices VIII Article 862519 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625). https://doi.org/10.1117/12.2008830

Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. / Lochner, Zachary; Kao, Tsung Ting; Liu, Yuh Shiuan et al.
Gallium Nitride Materials and Devices VIII. 2013. 862519 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8625).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lochner, Z, Kao, TT, Liu, YS, Li, XH, Satter, MM, Shen, SC, Yoder, PD, Ryou, JH, Dupuis, RD, Wei, Y, Xie, H, Fischer, A & Ponce, F 2013, Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition. in Gallium Nitride Materials and Devices VIII., 862519, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8625, SPIE Symposium on Gallium Nitride Materials and Devices VIII, San Francisco, CA, United States, 2/4/13. https://doi.org/10.1117/12.2008830

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title = "Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition",

abstract = "Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.",

keywords = "Deep ultraviolet, III-V semiconductors, Lasers, Metalorganic chemical vapor deposition, Optical pumping",

author = "Zachary Lochner and Kao, {Tsung Ting} and Liu, {Yuh Shiuan} and Li, {Xiao Hang} and Satter, {Md Mahbub} and Shen, {Shyh Chiang} and Yoder, {P. Douglas} and Ryou, {Jae Hyun} and Dupuis, {Russell D.} and Yong Wei and Hongen Xie and Alec Fischer and Fernando Ponce",

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doi = "10.1117/12.2008830",

language = "English (US)",

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series = "Proceedings of SPIE - The International Society for Optical Engineering",

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T1 - Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

AU - Lochner, Zachary

AU - Kao, Tsung Ting

AU - Liu, Yuh Shiuan

AU - Li, Xiao Hang

AU - Satter, Md Mahbub

AU - Shen, Shyh Chiang

AU - Yoder, P. Douglas

AU - Ryou, Jae Hyun

AU - Dupuis, Russell D.

AU - Wei, Yong

AU - Xie, Hongen

AU - Fischer, Alec

AU - Ponce, Fernando

PY - 2013

Y1 - 2013

N2 - Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

AB - Data are presented for AlGaN-AlN multiple-quantum-well optically pumped lasers operating at 300K. The structures were grown by MOCVD on bulk AlN substrates and were fabricated into cleaved bars with a cavity length ∼1mm. The epitaxial structures consist of ten 3 nm AlGaN quantum wells with 5 nm AlGaN barriers and an AlN buffer layer deposited on a (0001) AlN substrate at a growth temperature 1155 °C. The bars were photopumped under pulsed conditions at 300K with a 193nm excimer laser. The threshold optical pump power is 455 kW/cm2 and laser emission is observed at 247 nm.

KW - Deep ultraviolet

KW - III-V semiconductors

KW - Lasers

KW - Metalorganic chemical vapor deposition

KW - Optical pumping

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DO - 10.1117/12.2008830

M3 - Conference contribution

AN - SCOPUS:84878734203

SN - 9780819493941

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Gallium Nitride Materials and Devices VIII

T2 - SPIE Symposium on Gallium Nitride Materials and Devices VIII

Y2 - 4 February 2013 through 7 February 2013

ER -

Room-temperature optically pumped AlGaN-AlN multiple-quantumwell lasers operating at <260 nm grown by metalorganic chemical vapor deposition

Abstract

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Keywords

ASJC Scopus subject areas

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