@inproceedings{9e571b1b56ce4ca0832a0af389c1dec9,
title = "Room temperature and cryogenic performance of self-aligned AlInAs-GaInAs HEMTs with 0.15 μm gate length",
abstract = "A novel self-aligned technique for 0.15μm gate length AlInAs-GaInAs HEMTs has been demonstrated. Devices with an oxide sidewall yielded an fT of 177 GHz whereas devices with no sidewall exhibited an fT greater than 250 GHz. The difference has been related to process damage during plasma deposition of SiO2. An extrinsic fT of 292 GHz was measured at 77K.",
author = "Mishra, {U. K.} and Brown, {A. S.} and Jelloian, {L. M.} and M. Thompson and Rosenbaum, {S. E.} and Nguyen, {L. D.} and Solomon, {P. M.} and R. Kiehl and Kwark, {Y. H.}",
year = "1990",
language = "English (US)",
isbn = "0819403393",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "Publ by Int Soc for Optical Engineering",
pages = "21--29",
editor = "Eastman, {Lester F.}",
booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
note = "High-Speed Electronics and Device Scaling ; Conference date: 18-03-1990 Through 19-03-1990",
}