TY - JOUR
T1 - Role of Cation Ordering on Device Performance in (Ag,Cu)InSe2Solar Cells with KF Post-Deposition Treatment
AU - Nietzold, Tara
AU - Valdes, Nicholas
AU - Stuckelberger, Michael E.
AU - Chiu, Michelle
AU - Walker, Trumann
AU - Jeffries, April M.
AU - Sinha, Archana
AU - Schelhas, Laura T.
AU - Lai, Barry
AU - Shafarman, William N.
AU - Bertoni, Mariana I.
N1 - Funding Information:
This research used resources of the Advanced Photon Source, a U.S. Department of Energy (DOE) Office of Science User Facility, operated for the DOE Office of Science by Argonne National Laboratory under Contract No. DE-AC02-06CH11357. T.N., T.W., and A.M.J. received funding from the National Science Foundation (NSF), the Engineering Research Center QESST, and the U.S. Department of Energy (DOE) under contract DE-EE0008163. N.V. and W.N.S. were funded in part by the National Science Foundation under award number 1507351. M.E.S. received funding from Deutsches Elektronen-Synchrotron DESY. Use of the Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, was supported by the U.S. Department of Energy, Office of Basic Energy Sciences under Contract No. DE-AC02-76SF00515. L.T.S. and A.S. were supported by funding provided as part of the Durable Modules Materials Consortium (DuraMAT), an Energy Materials Network Consortium funded by the U.S. Department of Energy, Office of Energy Efficiency and Renewable Energy, Solar Energy Technologies Office agreement number 302509. The views expressed in this article do not necessarily represent the views of the DOE, the NSF, or the U.S. Government.
Publisher Copyright:
© 2021 American Chemical Society.
PY - 2021/1/25
Y1 - 2021/1/25
N2 - CuInSe2 (CIS) has been proposed as an attractive bottom cell candidate in tandem solar cells. However, to justify the coupling with high-performance top cells (e.g., perovskites, GaAs), significant work on improving the efficiency is required. To this extent, several authors have demonstrated the benefits of alkali post-deposition treatments (PDT) to increase device open-circuit voltage (Voc) in CIS and how Ag alloying - (Ag,Cu)InSe2 (ACIS) - reduces defect density and enhances current collection in devices. Herein, we present a detailed study of the role that KF-PDT plays on CIS and ACIS absorber composition and structure, and propose an explanation for the decreased Voc observed when silver and potassium coexist in the system (ACIS + KF). Through a suite of synchrotron-based techniques, we investigate the nanoscale chemical distribution of the films and the formation of secondary phases. Through photoluminescence imaging, we observed a high degree of passivation with the addition of KF, and synchrotron-based X-ray diffraction confirmed the absence of a KInSe2 surface layer usually considered to be a passivating agent. Raman spectroscopy and synchrotron X-ray fluorescence show the increased presence of Cu- and Se-poor clusters in ACIS + KF, which are correlated to significantly reduced X-ray beam-induced current (XBIC). An increase in the intensity of the E/B2 stretching mode of CIS is attributed to cation ordering near the junction and is found to track inversely to bulk Voc measurements. The cation ordering is hypothesized to arise from the formation and redistribution of defects that normally occur near the surfaces of CIS as a consequence of its polar character. These defects compensate each other, and the overall inhomogeneity of the charge distribution generates electrostatic potential fluctuations that greatly increase the saturation current and hence reduce the open-circuit voltage of the device.
AB - CuInSe2 (CIS) has been proposed as an attractive bottom cell candidate in tandem solar cells. However, to justify the coupling with high-performance top cells (e.g., perovskites, GaAs), significant work on improving the efficiency is required. To this extent, several authors have demonstrated the benefits of alkali post-deposition treatments (PDT) to increase device open-circuit voltage (Voc) in CIS and how Ag alloying - (Ag,Cu)InSe2 (ACIS) - reduces defect density and enhances current collection in devices. Herein, we present a detailed study of the role that KF-PDT plays on CIS and ACIS absorber composition and structure, and propose an explanation for the decreased Voc observed when silver and potassium coexist in the system (ACIS + KF). Through a suite of synchrotron-based techniques, we investigate the nanoscale chemical distribution of the films and the formation of secondary phases. Through photoluminescence imaging, we observed a high degree of passivation with the addition of KF, and synchrotron-based X-ray diffraction confirmed the absence of a KInSe2 surface layer usually considered to be a passivating agent. Raman spectroscopy and synchrotron X-ray fluorescence show the increased presence of Cu- and Se-poor clusters in ACIS + KF, which are correlated to significantly reduced X-ray beam-induced current (XBIC). An increase in the intensity of the E/B2 stretching mode of CIS is attributed to cation ordering near the junction and is found to track inversely to bulk Voc measurements. The cation ordering is hypothesized to arise from the formation and redistribution of defects that normally occur near the surfaces of CIS as a consequence of its polar character. These defects compensate each other, and the overall inhomogeneity of the charge distribution generates electrostatic potential fluctuations that greatly increase the saturation current and hence reduce the open-circuit voltage of the device.
KW - Ag alloying
KW - Raman spectroscopy
KW - Vloss
KW - X-ray beam-induced current
KW - X-ray fluorescence
KW - cation order
KW - post-deposition treatment
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U2 - 10.1021/acsaem.0c02197
DO - 10.1021/acsaem.0c02197
M3 - Article
AN - SCOPUS:85100034408
SN - 2574-0962
VL - 4
SP - 233
EP - 241
JO - ACS Applied Energy Materials
JF - ACS Applied Energy Materials
IS - 1
ER -