Abstract
A generic compact modeling methodology for emerging nonvolatile memories is proposed by coupling comprehensive physical equations from multiple domains (e.g., electrical, thermal, magnetic, phase transitions). This concept has been applied to three most promising emerging memory candidates: PCM, STT-MRAM, and RRAM to study their device physics as well as to evaluate their circuit-level performance. The models’ good predictability to experiments and their effectiveness in large-scale circuit simulation suggest their unique role in emerging memory research and development.
Original language | English (US) |
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Pages (from-to) | 1257-1269 |
Number of pages | 13 |
Journal | Journal of Computational Electronics |
Volume | 16 |
Issue number | 4 |
DOIs | |
State | Published - Dec 1 2017 |
Keywords
- 1T1R
- Compact modeling
- Cross-point
- GST
- Nonvolatile memory (NVM)
- OTS
- PCM
- RRAM
- Reaction rate equation (RRE)
- STT-MRAM
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Modeling and Simulation
- Electrical and Electronic Engineering