TY - GEN
T1 - Reverse Recovery Behavior in Vertical Diamond Schottky Diodes
AU - Woo, K.
AU - Shankar, B.
AU - Malakoutian, M.
AU - Koeck, F.
AU - Nemanich, R.
AU - Chowdhury, Srabanti
N1 - Funding Information:
This work was supported by ULTRA, an Energy Frontier Research Center funded by the U.S. Department of Energy (DOE).
Publisher Copyright:
© 2022 IEEE.
PY - 2022
Y1 - 2022
N2 - As an ultra-wide-bandgap material, diamond is an extremely attractive semiconductor for power electronic applications. The switching behavior in devices for power applications should be investigated to reduce significant energy losses. In this study, we have investigated the switching behavior in a vertical diamond Schottky barrier diode. The reverse recovery time was measured to be ~4-7 ns on average depending on the clamped inductive switching test setup. The diode was switched from a conducting current of as much as 948 A/cm2 to a blocking field up to 0.6 MV/cm. Very short reverse recovery times in addition to minimal changes in response to differing levels of on-state current, switching frequency, and temperature indicate a majority carrier diamond device as expected.
AB - As an ultra-wide-bandgap material, diamond is an extremely attractive semiconductor for power electronic applications. The switching behavior in devices for power applications should be investigated to reduce significant energy losses. In this study, we have investigated the switching behavior in a vertical diamond Schottky barrier diode. The reverse recovery time was measured to be ~4-7 ns on average depending on the clamped inductive switching test setup. The diode was switched from a conducting current of as much as 948 A/cm2 to a blocking field up to 0.6 MV/cm. Very short reverse recovery times in addition to minimal changes in response to differing levels of on-state current, switching frequency, and temperature indicate a majority carrier diamond device as expected.
KW - diamond Schottky diode
KW - diamond semiconductor switching
KW - reverse recovery
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U2 - 10.1109/CSW55288.2022.9930407
DO - 10.1109/CSW55288.2022.9930407
M3 - Conference contribution
AN - SCOPUS:85142627033
T3 - 2022 Compound Semiconductor Week, CSW 2022
BT - 2022 Compound Semiconductor Week, CSW 2022
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2022 Compound Semiconductor Week, CSW 2022
Y2 - 1 June 2022 through 3 June 2022
ER -