Resonance effects in RHEED on GaAs(110) surface

J. M. Zuo, Jingyue Liu

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


We have studied the RHEED resonance condition on the GaAs(110) surface near the (880) and (620) Bragg conditions. The resonance intensity has been measured, using an energy filtering device which excludes inelastically scattered electrons involving energy losses greater than 2.5 eV. These measured intensities are compared with simulated ones using the Bloch wave method. It is found that the anomalous intensity enhancement at the resonance condition is due to the multiple scattering in the top surface atomic layers, and the surface potential barrier may effect the magnitude of the intensity enhancement. Resonance occurs when there is a Bloch wave that has a very small penetration depth into the bulk crystal, and this Bloch wave is strongly excited.

Original languageEnglish (US)
Pages (from-to)253-259
Number of pages7
JournalSurface Science
Issue number1-2
StatePublished - 1992

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


Dive into the research topics of 'Resonance effects in RHEED on GaAs(110) surface'. Together they form a unique fingerprint.

Cite this