TY - JOUR
T1 - Resistive memory-based analog synapse
T2 - The pursuit for linear and symmetric weight update
AU - Woo, Jiyong
AU - Yu, Shimeng
N1 - Funding Information:
This work is supported in part by the National science Foundation (NsF) computing and communication Foun dations 1552687, NsF/semiconductor research corporation (src) energy efficient computing: from Devices to architecture (e2cDa), and applica tions and systems Driven center for energy-efficient integrated NanoTech- nologies (one of the six src/Defense advanced research Projects agency Joint University Microelectronics Program centers).
Publisher Copyright:
© 2007-2011 IEEE.
PY - 2018/9
Y1 - 2018/9
N2 - This article reviews the recent developments in a type of random access memory (RAM) called resistive RAM (RRAM) for the analog synapse, which is an important building block for neuromorphic computing systems. To achieve high learning accuracy in an artificial neural network based on the backpropagation learning rule, a linear and symmetric weight update behavior of the analog synapse is critical. The physical mechanisms in the RRA M (interfacing switching versus filamentary switching) are discussed, and the pros and cons of each mechanism to emulate the analog synaptic weights are compared. Then, various strategies from a materials and device engineering perspective are surveyed to achieve linearly and symmetric conductance changes under identical pulses. Finally, future research directions are outlined.
AB - This article reviews the recent developments in a type of random access memory (RAM) called resistive RAM (RRAM) for the analog synapse, which is an important building block for neuromorphic computing systems. To achieve high learning accuracy in an artificial neural network based on the backpropagation learning rule, a linear and symmetric weight update behavior of the analog synapse is critical. The physical mechanisms in the RRA M (interfacing switching versus filamentary switching) are discussed, and the pros and cons of each mechanism to emulate the analog synaptic weights are compared. Then, various strategies from a materials and device engineering perspective are surveyed to achieve linearly and symmetric conductance changes under identical pulses. Finally, future research directions are outlined.
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U2 - 10.1109/MNANO.2018.2844902
DO - 10.1109/MNANO.2018.2844902
M3 - Article
AN - SCOPUS:85050005859
SN - 1932-4510
VL - 12
SP - 36
EP - 44
JO - IEEE Nanotechnology Magazine
JF - IEEE Nanotechnology Magazine
IS - 3
M1 - 8411333
ER -