Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

Hiroyuki Okino; Iwao Matsuda; Rei Hobara; Yoshikazu Hosomura; Shuji Hasegawa; Peter Bennett

doi:10.1380/ejssnt.2005.362

Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

Hiroyuki Okino, Iwao Matsuda, Rei Hobara, Yoshikazu Hosomura, Shuji Hasegawa, Peter Bennett

Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have measured electrical resistance of individual epitaxial CoSi ₂ nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 10⁷ Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi ₂ films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface.

Original language	English (US)
Pages (from-to)	362-366
Number of pages	5
Journal	e-Journal of Surface Science and Nanotechnology
Volume	3
DOIs	https://doi.org/10.1380/ejssnt.2005.362
State	Published - Dec 3 2005

Keywords

Cobalt
Electrical transport
Multi-probe method
Multi-tip scanning tunneling microscope
Nano-wires
Si(110)
Silicides

ASJC Scopus subject areas

Biotechnology
Bioengineering
Condensed Matter Physics
Mechanics of Materials
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1380/ejssnt.2005.362

Cite this

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title = "Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope",

abstract = "We have measured electrical resistance of individual epitaxial CoSi 2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 107 Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi 2 films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface.",

keywords = "Cobalt, Electrical transport, Multi-probe method, Multi-tip scanning tunneling microscope, Nano-wires, Si(110), Silicides",

author = "Hiroyuki Okino and Iwao Matsuda and Rei Hobara and Yoshikazu Hosomura and Shuji Hasegawa and Peter Bennett",

year = "2005",

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doi = "10.1380/ejssnt.2005.362",

language = "English (US)",

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T1 - Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

AU - Okino, Hiroyuki

AU - Matsuda, Iwao

AU - Hobara, Rei

AU - Hosomura, Yoshikazu

AU - Hasegawa, Shuji

AU - Bennett, Peter

PY - 2005/12/3

Y1 - 2005/12/3

N2 - We have measured electrical resistance of individual epitaxial CoSi 2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 107 Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi 2 films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface.

AB - We have measured electrical resistance of individual epitaxial CoSi 2 nanowires (NWs) formed on a Si(110) surface in situ in ultrahigh vacuum, by two-, three-, and four-point probe methods using a multi-tip scanning tunneling microscope at room temperature. The NWs were electrically isolated from the substrate by a Schottky barrier in-between with zero-bias resistance of approximately 107 Ω. Contact resistance between a W tip and a NW was as small as several tens Ω. The resistivity of the NWs was ca. 30 μΩcm, which is similar to that of high-quality epitaxial CoSi 2 films. The oxidation of the NW surface had negligible influence on the resistance, meaning marginal carrier scattering at the NW surface.

KW - Cobalt

KW - Electrical transport

KW - Multi-probe method

KW - Multi-tip scanning tunneling microscope

KW - Nano-wires

KW - Si(110)

KW - Silicides

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JO - e-Journal of Surface Science and Nanotechnology

JF - e-Journal of Surface Science and Nanotechnology

ER -

Resistance measurements of metallic suicide nanowires on a Si substrate with a four-tip scanning tunneling microscope

Abstract

Keywords

ASJC Scopus subject areas

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