Relationship of field emission characteristics on process gas nitrogen content in nitrogen doped diamond films

A. T. Sowers, B. L. Ward, Robert Nemanich

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This study explores the field emission properties of nitrogen doped diamond grown by microwave plasma CVD. Several diamond samples were grown on silicon under varying conditions. With certain process parameters, films can be grown which exhibit photoluminescence bands at 1.945 eV and 2.154 eV that are attributed to single substitutional nitrogen. Field emission characteristics were measured in ultrahigh vacuum with a position variable anode. For samples grown with gas phase [N]/[C] ratios less than 16, damage from micro-arcs occurred during the field emission measurements. Samples grown at higher [N]/[C] content could be measured without damage. These measurements indicate relatively high threshold fields (>100 V/μm) for electron emission. From the data, two possible field emission mechanisms are presented. Conducting defect states in the bandgap of diamond may provide a source of electrons to the emitting diamond surface.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsD.S. Schwartz, D.S. Shih, A.G. Evans, H.N.G. Wadley
Number of pages6
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: Apr 13 1998Apr 15 1998


OtherProceedings of the 1998 MRS Spring Symposium
CitySan Francisco, CA, USA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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