Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes

Chih Chien Pan; Tao Gilbert; Nathan Pfaff; Shinichi Tanaka; Yuji Zhao; Daniel Feezell; James S. Speck; Shuji Nakamura; Steven P. DenBaars

doi:10.1143/APEX.5.102103

Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes

Chih Chien Pan, Tao Gilbert, Nathan Pfaff, Shinichi Tanaka, Yuji Zhao, Daniel Feezell, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Research output: Contribution to journal › Article › peer-review

40 Scopus citations

Abstract

We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (2021) plane. At a current density 100 A/cm ², the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm ². A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.

Original language	English (US)
Article number	102103
Journal	Applied Physics Express
Volume	5
Issue number	10
DOIs	https://doi.org/10.1143/APEX.5.102103
State	Published - Oct 2012
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (2021) plane. At a current density 100 A/cm 2, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm 2. A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.",

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AU - Pan, Chih Chien

AU - Gilbert, Tao

AU - Pfaff, Nathan

AU - Tanaka, Shinichi

AU - Zhao, Yuji

AU - Feezell, Daniel

AU - Speck, James S.

AU - Nakamura, Shuji

AU - DenBaars, Steven P.

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AB - We report on the thermal performance of the electroluminescence of 12-nm-thick single-quantum-well (SQW) InGaN blue light-emitting diodes (LEDs) grown on the semipolar (2021) plane. At a current density 100 A/cm 2, the external quantum efficiency (EQE) decreased by 9.7% when the temperature was increased from 20 to 100 °C. Hot/cold factors were more than 0.9 at current densities greater than 20 A/cm 2. A high characteristic temperature of 900 K and low junction temperature of 68 °C were also measured using bare LED chips.

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Reduction in thermal droop using thick single-quantum-well structure in semipolar (2021) blue light-emitting diodes

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