Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF+2-implanted silicon

M. Y. Tsai; D. S. Day; B. G. Streetman; P. Williams; C. A. Evans

doi:10.1063/1.325689

Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF⁺₂-implanted silicon

M. Y. Tsai, D. S. Day, B. G. Streetman, P. Williams, C. A. Evans

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101 Scopus citations

Abstract

Fluorine distribution profiles for silicon implanted with BF ⁺₂ have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).

Original language	English (US)
Pages (from-to)	188-192
Number of pages	5
Journal	Journal of Applied Physics
Volume	50
Issue number	1
DOIs	https://doi.org/10.1063/1.325689
State	Published - 1979
Externally published	Yes

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Physics and Astronomy(all)

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abstract = "Fluorine distribution profiles for silicon implanted with BF +2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).",

author = "Tsai, {M. Y.} and Day, {D. S.} and Streetman, {B. G.} and P. Williams and Evans, {C. A.}",

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AU - Tsai, M. Y.

AU - Day, D. S.

AU - Streetman, B. G.

AU - Williams, P.

AU - Evans, C. A.

PY - 1979

Y1 - 1979

N2 - Fluorine distribution profiles for silicon implanted with BF +2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).

AB - Fluorine distribution profiles for silicon implanted with BF +2 have been measured by SIMS as a function of anneal temperature and time. Anomalous migration of fluorine is observed in samples having amorphized layers after implantation. Outdiffusion of fluorine occurs during recrystallization of the amorphous layer, and fluorine collects in regions of residual damage during annealing. This gettering of fluorine by defects illustrates the residual damage below the amorphized layer in samples implanted at room temperature is more difficult to anneal out than that in samples implanted at lower temperture (∼-110°C).

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Recrystallization of implanted amorphous silicon layers. II. Migration of fluorine in BF⁺₂-implanted silicon

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