In this paper, we present a review of the state of the art in memristor technologies. Along with ionic conducting devices [i.e., conductive bridging random access memory (CBRAM)], we include phase change, and organic/organo-metallic technologies, and we review the most recent advances in oxide-based memristor technologies. We present progress on 3-D integration techniques, and we discuss the behavior of more mature memristive technologies in extreme environments.

Original languageEnglish (US)
Article number7128486
Pages (from-to)1004-1033
Number of pages30
JournalProceedings of the IEEE
Issue number7
StatePublished - Jul 1 2015


  • 3-D integration
  • Memristor
  • ReRAM
  • radiation effects

ASJC Scopus subject areas

  • General Computer Science
  • Electrical and Electronic Engineering


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