Abstract
The technique of high-resolution electron microscopy represents a powerful method for characterizing the microstructure of thin films and surfaces. We demonstrate its usefulness by reference to some recent studies of metals, semiconductors, and oxides, in particular, showing that it can be used to follow physical and chemical changes induced in situ by the electron beam or ex situ as a result of annealing or chemical treatment.
Original language | English (US) |
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Pages (from-to) | 1063-1070 |
Number of pages | 8 |
Journal | Metallurgical Transactions A |
Volume | 23 |
Issue number | 4 |
DOIs | |
State | Published - Apr 1992 |
ASJC Scopus subject areas
- Engineering(all)