Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

T. P. Humphreys; J. B. Posthill; K. Das; C. A. Sukow; R. J. Nemanichi; N. R. Parikh; A. Majeed

doi:10.1143/JJAP.28.L1595

Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

T. P. Humphreys, J. B. Posthill, K. Das, C. A. Sukow, R. J. Nemanichi, N. R. Parikh, A. Majeed

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

We report results pertaining to the measurement of strain by Raman spectroscopy in GaAs epitaxial films grown by molecular beam epitaxy on sapphire and silicon-on-sapphire substrates. Comparative studies indicate that the GaAs layers deposited directly on sapphire substrates show no measurable strain, and only a small residual tensile strain is observed in the films grown on silicon-on-sapphire substrates. The magnitude of the strain in the GaAs/silicon-on-sapphire heterostructures is reduced by over a factor of 4.5 as compared to that observed in the GaAs films deposited directly on single-crystal silicon (100) substrates under the same growth conditions

Original language	English (US)
Pages (from-to)	L1595-L1598
Journal	Japanese Journal of Applied Physics
Volume	28
Issue number	9 A
DOIs	https://doi.org/10.1143/JJAP.28.L1595
State	Published - Sep 1 1989
Externally published	Yes

Keywords

Absorption spectrum
Excitation spectrum
Fluorescence decay time
Fluorescence spectrum
Pyrene-doped amorphous silica glass
Sol-gel method

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.28.L1595

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title = "Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates",

abstract = "We report results pertaining to the measurement of strain by Raman spectroscopy in GaAs epitaxial films grown by molecular beam epitaxy on sapphire and silicon-on-sapphire substrates. Comparative studies indicate that the GaAs layers deposited directly on sapphire substrates show no measurable strain, and only a small residual tensile strain is observed in the films grown on silicon-on-sapphire substrates. The magnitude of the strain in the GaAs/silicon-on-sapphire heterostructures is reduced by over a factor of 4.5 as compared to that observed in the GaAs films deposited directly on single-crystal silicon (100) substrates under the same growth conditions",

keywords = "Absorption spectrum, Excitation spectrum, Fluorescence decay time, Fluorescence spectrum, Pyrene-doped amorphous silica glass, Sol-gel method",

author = "Humphreys, {T. P.} and Posthill, {J. B.} and K. Das and Sukow, {C. A.} and Nemanichi, {R. J.} and Parikh, {N. R.} and A. Majeed",

year = "1989",

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doi = "10.1143/JJAP.28.L1595",

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TY - JOUR

T1 - Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

AU - Humphreys, T. P.

AU - Posthill, J. B.

AU - Das, K.

AU - Sukow, C. A.

AU - Nemanichi, R. J.

AU - Parikh, N. R.

AU - Majeed, A.

PY - 1989/9/1

Y1 - 1989/9/1

N2 - We report results pertaining to the measurement of strain by Raman spectroscopy in GaAs epitaxial films grown by molecular beam epitaxy on sapphire and silicon-on-sapphire substrates. Comparative studies indicate that the GaAs layers deposited directly on sapphire substrates show no measurable strain, and only a small residual tensile strain is observed in the films grown on silicon-on-sapphire substrates. The magnitude of the strain in the GaAs/silicon-on-sapphire heterostructures is reduced by over a factor of 4.5 as compared to that observed in the GaAs films deposited directly on single-crystal silicon (100) substrates under the same growth conditions

AB - We report results pertaining to the measurement of strain by Raman spectroscopy in GaAs epitaxial films grown by molecular beam epitaxy on sapphire and silicon-on-sapphire substrates. Comparative studies indicate that the GaAs layers deposited directly on sapphire substrates show no measurable strain, and only a small residual tensile strain is observed in the films grown on silicon-on-sapphire substrates. The magnitude of the strain in the GaAs/silicon-on-sapphire heterostructures is reduced by over a factor of 4.5 as compared to that observed in the GaAs films deposited directly on single-crystal silicon (100) substrates under the same growth conditions

KW - Absorption spectrum

KW - Excitation spectrum

KW - Fluorescence decay time

KW - Fluorescence spectrum

KW - Pyrene-doped amorphous silica glass

KW - Sol-gel method

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SN - 0021-4922

VL - 28

SP - L1595-L1598

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 9 A

ER -

Raman scattering characterization of strain in gaas heteroepitaxial films grown on sapphire and silicon-on-sapphire substrates

Abstract

Keywords

ASJC Scopus subject areas

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